Mainly used for the low-temperature deposition of amorphous silicon (a-Si) and silicon dioxide. Due to its lower decomposition temperature compared to silane, it is ideal for integrated circuits with strict thermal budgets, such as NAND Flash memory.

Reacts with germanium in deposition equipment to form Silicon-Germanium (SiGe) layers. This layer creates strain on the silicon lattice, significantly improving transistor performance in single-nanometer scale integrated circuits.

With a lower deposition temperature, disilane is suitable for processing on heat-sensitive substrates. This enables the formation of ultra-thin silicon films through Atomic Layer Deposition (ALD) technology.

The absence of halides and carbon impurities makes it a preferred precursor for silicide formation, epitaxial silicon deposition, and other specialized silicon-based thin-film applications.